Property Improvement of GaAs Surface by 1-Octadecanethiol Passivation
نویسندگان
چکیده
منابع مشابه
Passivation of GaAs surface by ultrathin epitaxial GaN layer
Ultrathin gallium nitride passivation layers grown in situ on near-surface InxGa1 xAs=GaAs quantum wells using metalorganic vapour-phase epitaxy (MOVPE) with dimethylhydrazine as nitrogen source are reported. Nitridation of GaAs using DMHy during the post-growth cool-down is also studied. The effect of passivation on the surface recombination rate of quantum well (QW) structures is characterize...
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The suitability of titaniumnitride (TiN) for GaAs surface passivation and protection is investigated. A 2–6nm thick TiN passivation layer is deposited by atomic layer deposition (ALD) at 275 C on top of InGaAs/ GaAs near surface quantum well (NSQW) structures to study the surface passivation. X-ray reflectivity measurements are used to determine the physical properties of the passivation layer....
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We report a systematic study of carrier dynamics in Al(x)Ga(1-x)As-passivated GaAs nanowires. With passivation, the minority carrier diffusion length (L(diff)) increases from 30 to 180 nm, as measured by electron beam induced current (EBIC) mapping, and the photoluminescence (PL) lifetime increases from sub-60 ps to 1.3 ns. A 48-fold enhancement in the continuous-wave PL intensity is observed o...
متن کاملGaAs surface passivation by ultra-thin epitaxial GaP layer and surface As–P exchange
The GaAs surface passivation effects of epitaxially grown ultra-thin GaP layers and surface As–P exchange have been investigated. Optical properties of passivated and unpassivated InGaAs/GaAs near-surface quantum wells (QWs) grown by metal organic vapor phase epitaxy (MOVPE) are studied by low-temperature continuous-wave and time-resolved photoluminescence (PL). By optimizing the growth conditi...
متن کاملPhotoelectrochemical passivation of GaAs surfaces
A wet. chemical techniq~e is ~escribed for passivating air-exposed GaAs surfaces. The passivating ~ayer IS elemental arsemc WhICh forms as a result of illuminating an n-type GaAs wafer immersed ~n a ~i~ture of Hel acid and d~ionized 18 Mil water with light from a mercury vapor lamp at mtenSltles of 0.01-0.05 yY-cm. Studies using XPS, LEBD, and UPS show that the passivated surfaces have the foll...
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ژورنال
عنوان ژورنال: Crystals
سال: 2019
ISSN: 2073-4352
DOI: 10.3390/cryst9030130